EFFECT OF NA-LIGHT RADIATION ON THE OPTICAL GAP AND CRYSTAL-STRUCTUREOF AGNO3-DIFFUSED PVDF SENSOR

A casting method was used to prepare polyvinylidene fluoride (PVDF) an d 1 wt % MnCl2-filled PVDF films. AgNO3 was allowed to diffuse through the filled films. The 3 types of the prepared films were irradiated b y Na light with various doses. The post-irradiation and relaxation eff ects were investigated using ultraviolet-visible spectroscopy, X-ray a nalysis, and optical microscopy. The results were interpreted on the b ases of a theoretical model previously suggested for a build-up and de cay of radiation-induced conductivity associated with the transition o f charge carriers in the presence of a uniform trap distribution. Vari ous structures were proposed for the diffused AgNO3 before and after i rradiation. It was found that the induced change in optical gap, due t o 5-min irradiation time for the AgNO3 diffused films, exhibits no rel axation phenomenon. Accordingly, this film can be used in photorecordi ng applications. (C) 1998 John Wiley & Sons, Inc.