Time resolved imaging has been used to analyze structural transformati
ons induced by intense 100 fs laser pulses in amorphous GeSb films. Ab
ove a threshold of 19 mJ/cm(2) the data show the formation of a transi
ent nonequilibrium state of the excited material within 300 fs. The re
sults are consistent with an electronically induced, amorphous-to-crys
talline phase transition. [S0031-9007(98)07514-0].