Charging and topography evolution simulations during plasma etching of
dense line-and-space patterns reveal that multiple-feature effects in
fluence critically the etch profile characteristics of the various lin
es. By including neighboring lines, the simulation predicts a peculiar
notching behavior, where the extent of notching varies with the locat
ion of the line. Feature-scale modeling can no longer be focused on in
dividual features alone; ''adjacency'' effects are crucial for underst
anding and predicting the outcome of etching experiments at reduced de
vice dimensions. (C) 1997 American Institute of Physics.