INFLUENCE OF ZR TI RATIOS ON THE DEFORMATION IN THE HYSTERESIS LOOP OF PB(ZR,TI)O-3 THIN-FILM CAPACITORS/

Electric field shift and deformation in the polarization-electric fiel d characteristics of Pb(Zr,Ti)O-3 (PZT) thin film capacitors with vari ous Zr/Ti ratios have been studied as a function of the annealing temp erature after patterning the top sputter-deposited Pt electrode using reactive ion etch with Ar gas. A large field shift and a constriction in the hysteresis loops ate observed, particularly in low Zr/Ti PZT fi lms annealed below 400 degrees C. A strong blocking layer effect in un annealed capacitor is found to be related to the internal field caused by trapped charges near electrodes. As the Zr/Ti ratio decreases, the field shift increases and the annealing temperature at which the inte rnal field disappears also increases. (C) 1997 American Institute of P hysics.