We successfully realized ZnCdSe quantum dots on a cleavage-induced ZnS
e (110) surface by depositing a ZnSe/ZnCdSe/ZnSe heterostructure under
growth conditions that cannot lead to layer-by-layer growth of ZnSe.
This growth mode introduces surface roughness to the newly deposited Z
nSe layer, and ZnCdSe quantum dots are then formed. Cathodoluminescenc
e and microphotoluminescence measurements demonstrate the formation of
quantum dots. (C) 1997 American Institute of Physics.