Large anisotropy in minority carrier diffusion length and specific con
ductivity is observed in epitaxial layers of GaInP2 alloys with CuPtB-
type ordering. Both the diffusion length and specific conductivity are
enhanced, by factor of 10, in the [110] direction, parallel to the Li
ne of intersection of the ordered (1-11) and (-111) planes with the (0
01) growth surface. The reduction in transport length in the [1-10] di
rection is attributed to carrier scattering at domain boundaries. No t
ransport anisotropy is observed in disordered GaInP2 epitaxial layers.
(C) 1997 American Institute of Physics.