20 GHZ HIGH-PERFORMANCE PLANAR SI INGAAS P-I-N PHOTODETECTOR/

Authors
LEVINE BF HAWKINS AR HIU S TSENG BJ KING CA GRUEZKE LA JOHNSON RW ZOLNOWSKI DR BOWERS JE
Citation
Bf. Levine et al., 20 GHZ HIGH-PERFORMANCE PLANAR SI INGAAS P-I-N PHOTODETECTOR/, Applied physics letters, 70(18), 1997, pp. 2449-2451
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
18
Year of publication
1997
Pages
2449 - 2451
Database
ISI
SICI code
0003-6951(1997)70:18<2449:2GHPSI>2.0.ZU;2-M
Abstract
Planar Si/InGaAs wafer fused p-i-n photodetectors were fabricated and measured. They show high internal quantum efficiency, high speed, reco rd low dark current, and no evidence of charge trapping, recombination centers, or a bandgap discontinuity at the heterointerface. (C) 1997 American Institute of Physics.