DEPENDENCE OF PHONON LINEWIDTHS IN SEMICONDUCTORS ON TEMPERATURE AND ISOTOPIC COMPOSITION

Authors
DEBERNARDI A CARDONA M
Citation
A. Debernardi et M. Cardona, DEPENDENCE OF PHONON LINEWIDTHS IN SEMICONDUCTORS ON TEMPERATURE AND ISOTOPIC COMPOSITION, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 20(7-8), 1998, pp. 923-930
Citations number
35
Categorie Soggetti
Physics
Journal title
Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics → ACNP
ISSN journal
03926737
Volume
20
Issue
7-8
Year of publication
1998
Pages
923 - 930
Database
ISI
SICI code
0392-6737(1998)20:7-8<923:DOPLIS>2.0.ZU;2-Z
Abstract
In this work we present calculations of the Raman linewidth in 3C-SiC with different isotopic compositions which present non-trivial trends. Our results are discussed for both longitudinal and transverse modes. The temperature dependence of the linewidth of natural SiC is compute d and compared with available experimental data.