LOCAL STRUCTURAL INVESTIGATION OF SILICON SURFACES BY ELECTRON-SCATTERING

We have utilized three experimental methods to study clean and adsorbe d Si surfaces exploiting electron scattering in different kinetic ener gy regimes Ganging from 100 to 1000 eV) for determining a number of st ructural parameters associated with surface local environment. This ha s been obtained by the analysis of the anisotropies of the intensities of core levels,Auger electron or back-diffusion of the elastic peak. Photoelectron and Auger electron diffraction are based on physical pri nciples analogous to those of LEED although there are many significant differences to compare to, due to the similar structural information which can be deduced. Finally we report a different approach to electr on holography which benefits from important issues.