THE PHOTOELECTRIC YIELD TECHNIQUE FOR THE CHARACTERIZATION OF THE SEMICONDUCTOR HETEROSTRUCTURES

Authors
EVANGELISTI F DIGASPARE L
Citation
F. Evangelisti et L. Digaspare, THE PHOTOELECTRIC YIELD TECHNIQUE FOR THE CHARACTERIZATION OF THE SEMICONDUCTOR HETEROSTRUCTURES, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 20(7-8), 1998, pp. 999-1006
Citations number
28
Categorie Soggetti
Physics
Journal title
Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics → ACNP
ISSN journal
03926737
Volume
20
Issue
7-8
Year of publication
1998
Pages
999 - 1006
Database
ISI
SICI code
0392-6737(1998)20:7-8<999:TPYTFT>2.0.ZU;2-U
Abstract
We discuss the use of the photoelectric yield spectroscopy for investi gating surface defects and interfaces. Few examples will be presented that clearly show the usefulness of the techniques. The heterostructur es discussed include crystalline/amorphous and crystalline/crystalline systems.