RECOMBINATION PROPERTIES OF CLEAN 16 X-2 AND PB-COVERED OR AL-COVERED(110) SILICON SURFACES

Authors
NESTERENKO B STADNIK O CRICENTI A PERFETTI P
Citation
B. Nesterenko et al., RECOMBINATION PROPERTIES OF CLEAN 16 X-2 AND PB-COVERED OR AL-COVERED(110) SILICON SURFACES, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 20(7-8), 1998, pp. 1025-1027
Citations number
12
Categorie Soggetti
Physics
Journal title
Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics → ACNP
ISSN journal
03926737
Volume
20
Issue
7-8
Year of publication
1998
Pages
1025 - 1027
Database
ISI
SICI code
0392-6737(1998)20:7-8<1025:RPOC1X>2.0.ZU;2-I
Abstract
The photoconductivity decay time constant tau(f) wa studied on the cle an Si(110)-''16 x 2'' surface and after adsorption of Al and Pb atoms. Significant changes of tau(f) were observed after adsorption. Namely, tau(f) increased about an order of magnitude and became close to the bulk decay time after adsorption on the ''16 x 2'' phase at room tempe rature. One could explain the observed results by changes in the surfa ce electron distribution, when large energy gaps appear between bulk a nd surface states.