BULK-LIKE SI(001) ATOMIC REARRANGEMENT ARTIFICIALLY CREATED AT THE GESB/SI(001) INTERFACE/

We report here on the electronic properties of the Ge/Sb/Si(001) inter face formation studied by very high-energy-resolution photoemission sp ectroscopy using synchrotson radiation. Surface- and bulk-sensitive me asurements of the core levels of the different atomic species give a c lear indication of the occurrence of a site exchange process between g ermanium and antimony, when Ge is deposited on the already prepared Sb /Si(001) interface. We demonstrate that the use of surfactant atoms li ke Sb at the strained Ge/Si(001) interface produces a perfect epitaxia l interface, where the Si atoms are in register with the bulk geometri cal positions.