N. Murata et al., CRYSTAL-GROWTH AND OPTICAL PROPERTY OF GAN ON SILICA GLASS BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-EXCITED MOLECULAR-BEAM EPITAXY (ECR-MBE), JPN J A P 2, 37(10B), 1998, pp. 1214-1216
GaN films were grown on a silica glass substrate by electron-cyclotron
-resonance plasma-excited molecular beam epitaxy (ECR-MBE). It was fou
nd that GaN films grown on silica glass exhibited stronger photolumine
scence (PL) intensity than that exhibited by GaN films grown on sapphi
re substrates and the PL peak position was the near-band-edge emission
of hexagonal GaN. In addition, the full-width at half maximum of the
PL spectrum for GaN grown on silica glass was smaller than that of GaN
grown on sapphire. GaN films grown on silica glass were c-oriented po
lycrystalline films consisting of columnar domains. It is believed tha
t c-axis orientation and columnar growth are strongly related ro the o
ptical properties.