EFFECTS OF ARSENIC CONCENTRATION IN GATE OXIDE ON ELECTRICAL-PROPERTIES OF METAL-OXIDE-SI CAPACITORS

The effects of drive-in temperature/time for As+ implantation on the e lectrical properties of metal-oxide-Si (MOS) capacitors are investigat ed. It is found that As in the gate oxide degrades significantly the s tability and reliability of MOS devices. When the drive-in temperature /time is increased, the sheet resistance of the gate electrode is decr eased while the changes in the electrical properties of MOS devices be come significant. From the results of neutron activation analysis (NAA ) of arsenic concentration in various gate oxides, changes in the elec trical properties of MOS devices could be attributed to the diffusion of arsenic into the gate oxide and/or the SiO2/Si interface.