ROOM-TEMPERATURE PULSED OPERATION OF GAN-BASED LASER-DIODES ON A-FACESAPPHIRE SUBSTRATE GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Authors
KIMURA Y MIYACHI M TAKAHASHI H TANAKA T NISHITSUKA M WATANABE A OTA H CHIKUMA K
Citation
Y. Kimura et al., ROOM-TEMPERATURE PULSED OPERATION OF GAN-BASED LASER-DIODES ON A-FACESAPPHIRE SUBSTRATE GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 2, 37(10B), 1998, pp. 1231-1233
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
37
Issue
10B
Year of publication
1998
Pages
1231 - 1233
Database
ISI
SICI code
Abstract
We report on the room-temperature pulsed current operation of GaN-base d laser diodes on a (11(2) over bar 0) (a-face) sapphire substrate gro wn by low-pressure metalorganic chemical vapor deposition (LP MOCVD). Ethyl biscyclopentadienyl magnesium (Et-Cp2Mg) and methyl silane (Me-S iH3) were used as precursors for dopants. The cavity mirror facets wer e formed by cleaving an a-face sapphire substrate along (<1(1)over bar >02) (r-face). The threshold current density was 41 kA/cm(2) and the o perating voltage at the threshold was 35 V. Above the threshold, laser emission was observed at 411 nm.