Burying passive components into the multilayer ceramic substrate can o
ffer increased circuit surface area for IC. With the addition of LiF,
nonstoichiometric barium titanate BaTi0.975O3 can be well densified af
ter sintering at the temperature less than 1000 degrees C. From X-ray
diffraction pattern, barium titanate is the main existing crystalline
structure. Dielectric constant about 1050 with the dissipation factor
2.3% was obtained for BaTi0.975O3 + 2 Wt% LiF embedded capacitor sinte
red at 900 degrees C.