ELECTRICAL-PROPERTIES OF SB-DOPED PZT FILMS DEPOSITED BY DC REACTIVE SPUTTERING USING MULTI-TARGETS

Sb-doped reactive sputtering-derived lead zirconate titanate (PZT) thi n films were investigated with the intention of improving ferroelectri c properties. Also, the atomic valence of Sb in PZT thin film was conf irmed as trivalent cation (Sb3+) by X-ray photoelectron spectroscopy ( XPS). According to the ionic radius and tolerance factor, Sb3+ tends t o occupy the B-site of ABO(3) perovskite structure and acts as an acce ptor that generates oxygen vacancies and holes. The P-r, E-c, E-i and polarization offset in lightly doped (< 1 at.%) PZT thin films increas ed as the Sb contents increased, but for heavily doped (> 1 at.%) PZT thin films, these parameters decreased. Lightly doped (similar to 1 at .%) PZST thin films exhibited improved fatigue properties (about 10% d egradation of the remanent polarization after 1010 switching cycles). (C) 1998 Elsevier Science B.V. All rights reserved.