ON THE SURFACE-MORPHOLOGY OF C-N FILMS DEPOSITED BY PULSED CATHODIC ARC-DISCHARGE METHOD

Authors
Citation
A. Stanishevsky, ON THE SURFACE-MORPHOLOGY OF C-N FILMS DEPOSITED BY PULSED CATHODIC ARC-DISCHARGE METHOD, Materials letters, 37(3), 1998, pp. 162-167
Citations number
17
Categorie Soggetti
Material Science","Physics, Applied
Journal title
ISSN journal
0167577X
Volume
37
Issue
3
Year of publication
1998
Pages
162 - 167
Database
ISI
SICI code
0167-577X(1998)37:3<162:OTSOCF>2.0.ZU;2-Y
Abstract
The surface morphology of C:N films deposited by a pulsed cathodic are discharge (PCAD) method at nitrogen pressure in the range of 0.2-15 P a was studied by atomic force microscopy (AFM). The roughness paramete r R-a was found to be changed from 0.25-0.30 nm for nitrogen-free film to 1.55-1.60 nm for C:N film with 40 at.% of the nitrogen content at P-N2 = 1-2 Pa. The further increase of P-N2 up to 15 Pa results in loc ally non-uniform surface morphology. It is assigned to the formation o f a polymeric phase in the film. The correlation of the surface morpho logy and chemical bonding in PCAD C:N films is discussed. (C) 1998 Els evier Science B.V. All rights reserved.