INVERSE MODELING AS A BASIS FOR PREDICTIVE DEVICE SIMULATION OF DEEP-SUBMICRON METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

A simple, flexible inverse modeling technique for deep submicron metal -oxide-semiconductor field effect transistors (MOSFETs), which is base d on capacitance versus voltage (C-V) and current versus voltage (I-V) data measured in the so-called linear device operation regime is pres ented. Based on the resultant device structure and doping profile, dev ice simulation yields good results not only for the linear regime but also under hot-carrier conditions. Substrate current, for example, is well reproduced over more than five orders of magnitude. Since the pol ysilicon-gate doping profile, the channel doping profile and the sourc e/drain doping profile are extracted separately, they can be varied in dependently, and it is possible to predict the impact of process param eter variation. Good agreement between the simulation and measurement results is found for devices with different channel implants, shallow source/drain-extension implants or oxide thicknesses without any furth er inverse modeling.