EPITAXIAL-GROWTH OF THE GAN FILM BY REMOTE-PLASMA METALORGANIC CHEMICAL-VAPOR-DEPOSITION

GaN films were successfully grown by the remote-plasma metalorganic ch emical vapor deposition (RPMOCVD) system. The composition of the GaN f ilms could be tuned from nitrogen-rich to stoichiometric growth by var ying the mole flow rate of trimethylgallium (TMGa). A hypothesis conce rning the collisions between excited nitrogen and TMGa was also brough t up. The collision between excited nitrogen and TMGa influences the c haracteristics of surface morphology, composition, growth rate, and gr owth mechanism. The characteristics of the GaN film were optimized by changing the growth conditions. The narrowest FWHM of the double-cryst al X-ray rocking curve is about 0.2 degrees. Under optimized condition s, the composition of the GaN film is almost the same as that of the r eference GaN film grown by MOCVD.