COUNTER-DOPED SURFACE CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH HIGH-CURRENT DRIVABILITY AND STEEP SUBTHRESHOLD SLOPE

A metal-oxide-semiconductor field-effect transistor (MOSFET) with a no vel channel structure called a counter-doped surface channel (CDSC) is proposed. A unique characteristic of the CDSC MOSFET is that the chan nel current still exists at the surface, even though the counter-doped layer is formed. Experimental results confirm that the CDSC pMOSFET u sing an n(+) poly-Si gate has the highest current drivability and the steepest subthreshold slope while maintaining a good short-channel-eff ect immunity compared with the surface channel (SC) and buried channel (BC) pMOSFET. The delay time with the CDSC pMOSFET represents 1.34-fo ld improvement in comparison to that with the SC pMOSFET.