IMPROVEMENT OF RELIABILITY OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH N2O NITRIDED GATE OXIDE AND N2O POLYSILICON GATE REOXIDATION

A systematic study of the impact of the reliability of metal-oxide sem iconductor field-effect transistors (MOSFETs) with N2O nitrided gate o xides and N2O poly-reoxidation was conducted. The improvements include hot carrier immunity, suppression of reverse short channel effect and suppression of plasma-induced degradation. These improvements are due to nitrogen incorporation at the oxide/Si-substrate interface. All da ta presented in this study involve substantially low thermal budget (8 50 degrees C), making this N2O-related technology extremely attractive and promising for future scaled devices.