EFFECTS OF NI SILICIDATION ON THE SHALLOW P(-SI FILMS ON SI SUBSTRATES()N JUNCTIONS FORMED BY BF2+ IMPLANTATION INTO THIN POLYCRYSTALLINE)

Effects of Ni silicidation on the samples that form shallow p(+)n junc tions by BF2+ implantation into thin polycrystalline-Si films on Si su bstrates have been studied. The pre-formed junctions of the pre-anneal ed samples are slightly improved as a post Ni silicidation is applied to them, since silicidation can enhance the dopant diffusion. A silici ded junction with a leakage of about 1 nA/cm(2) at -5 V is obtained by the sample pre-annealed at 800 degrees C and post NiSi-silicided at 6 00 degrees C. On the other hand, as the samples are treated by deposit ing thin Ni films just after the implantation and then annealing, the resulting junctions are much better than the above pre-formed ones, wi thout deepening the junction; During annealing, the simultaneous prese nce of both the driving forces arising from the Si interstitial and th e Ni silicidation would significantly enhance the dopant drive-in effi ciency. As a result, an NiSi-silicided shallow junction with a leakage of about 0.8 nA/cm(2) and an ideality factor of about 1.00 can be obt ained even at 700 degrees C.