FERROELECTRIC PROPERTIES OF SRBI2TA2O9 THIN-FILMS DEPOSITED ON VARIOUS BOTTOM ELECTRODES BY A MODIFIED RADIOFREQUENCY MAGNETRON SPUTTERING TECHNIQUE

Ferroelectric layered-oxide SrBi2Ta2O9 thin films were successfully de posited on metalorganic chemical vapor deposited (MOCVD) Pt/Ta/SiO2/Si (MPTSS), MOCVD-RuO2/Si (MRS), and Pt/Ti/SiO2/Si (PTSS) substrates usi ng a sintered Sr1.2Bi2.4Ta2.0O9 ceramic and Bi metal targets by modifi ed rf magnetron sputtering. The 190 nm thick Sr1.0Bi2.7Ta2.0O9 films d eposited on PTSS substrates have a remanent polarization (P-r) of 4.3 mu C/cm(2) and a coercive field (E-c) of 36.6 kV/cm at an applied volt age of 5 V. The SET films deposited on PTSS showed a fatigue-free char acteristic up to 1.0 x 10(10) cycles under a 5 V bipolar pulse and a l eakage current density of 8.0 x 10(-9) A/cm(2) at 150 kV/cm.