The enhancement of oscillator strength of silicon quantum dots (small
crystallites) by the image charge and the excitonic electron-hole attr
action is examined theoretically using a simple effective-mass model.
While the distortion of the envelope function is found to be significa
nt for the dot with a radius greater than 1 nm, the enhancement of the
oscillator strength is significant only when the doe radius is smalle
r than 1 nm.