STUDY ON PREPARATION CONDITIONS OF HIGH-QUALITY ZRN THIN-FILMS USING A LOW-TEMPERATURE PROCESS

We have investigated the preparation conditions of stoichiometric ZrN films with low resistivity and high crystallinity at relatively low te mperatures using an ultrahigh vacuum sputtering system. The film quali ty was evaluated by means of X-ray diffraction, X-ray photoelectron sp ectroscopy and Auger electron spectroscopy analyses. The resistivities were measured by a four-probe method. We found that stoichiometric Zr N films with nearly single (100) orientation and resistivity of 17 mu Omega cm grew on (100) Si under the optimum conditions of N-2 now rati o of 3%, low Sputtering power of 15 W and substrate temperature of 500 degrees C. It is therefore concluded that high-quality ZrN films fan be obtained at a relatively low substrate temperature, if appropriate sputtering conditions are satisfied using an ultrahigh vacuum sputteri ng system.