THERMO-FLOW STRUCTURE AND EPITAXIAL UNIFORMITY IN LARGE-SCALE METALORGANIC CHEMICAL-VAPOR-DEPOSITION REACTORS WITH ROTATING SUSCEPTOR AND INLET FLOW-CONTROL

The transport phenomena in large-scale metalorganic chemical vapor dep osition (MOCVD) reactors with a rotating susceptor are investigated by numerical simulation of thin-film epitaxial growth of gallium arsenid e. We are mainly concerned with the thermo-flow structure, its influen ce on epitaxial growth rate, and the means of improving epilayer flatn ess. The effects of susceptor rotation and thermo-flow conditions on g as flow, temperature and concentration fields are studied. The present results show the now structure and transport characteristics in vario us Bow regimes. A parameter map and the associated correlations of bou ndary curves of the flow-mode transition are proposed. It is demonstra ted that the epilayer flatness can be tuned either by properly control ling the vortex strength in a rotation-dominated flow regime and/or by employing an inlet now control technique proposed in the present work .