FREE-EXCITON TRANSITIONS AND VARSHNIS COEFFICIENTS FOR GAN EPITAXIAL LAYERS GROWN BY HORIZONTAL LP-MOCVD

Authors
VISWANATH AK LEE JI LEE CR LEEM JY KIM D
Citation
Ak. Viswanath et al., FREE-EXCITON TRANSITIONS AND VARSHNIS COEFFICIENTS FOR GAN EPITAXIAL LAYERS GROWN BY HORIZONTAL LP-MOCVD, Solid state communications, 108(7), 1998, pp. 483-487
Citations number
24
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
108
Issue
7
Year of publication
1998
Pages
483 - 487
Database
ISI
SICI code
0038-1098(1998)108:7<483:FTAVCF>2.0.ZU;2-U
Abstract
We have studied the photoluminescence properties off undoped epitaxial layers of GaN on sapphire substrate grown by horizontal low pressure metal organic chemical vapor deposition (LP-MOCVD) method in the tempe rature range of 9-300 K. At 9 K the spectra are dominated by the well resolved interband free excitons A and B as well as bound excitons. Te mperature dependence of free exciton transitions was studied and Varsh ni's coefficients for the temperature variation of bandgap were determ ined. (C) 1998 Elsevier Science Ltd. All rights reserved.