We present a model for the electrostatic response of the copper-water
interface, which takes into account the electronic, Stern layer, and d
ouble layer contributions. The electronic and Stern layer contribution
s are not separated, but are modeled together using a direct dynamics
model of the copper-water interface which we introduced earlier. The b
oundary condition for the double layer contribution is chosen to be co
nsistent with electric fields calculated explicitly from the molecular
dynamics simulation. We find results which are consistent with some e
xperimental results for the capacitance of the low-index surfaces of c
opper. A remarkable feature of the results is that the calculated macr
oscopic electric field is much more effectively screened near the inte
rface than it is in classical molecular dynamics models. (C) 1998 Amer
ican Institute of Physics. [S0021-9606(98)70441-6]