PROPERTIES OF THE TITANIUM RELATED LEVEL IN CD0.96ZN0.04TE CRYSTALS

Semi-insulating and n-type conductor titanium (Ti) doped CdZnTe has be en investigated by deep level transient spectroscopy, deep level optic al spectroscopy and photoinduced current transient spectroscopy. A mai n electron trap at 0.82 eV is detected and its electrical and optical characteristics are given. The sigma(n)(o) optical cross section spect rum of this level exhibits a resonance band attributed to the internal transition of the Ti2+ ion in CdZnTe. Starting from this identificati on, this deep trap is formally proposed to be the Ti2+/Ti3+ single don or level. The semi-insulating properties of the CdZnTe: Ti are interpr eted in relation to this deep donor. Finally, the impact of the optica l cross sections sigma(n)(o) and sigma(p)(o) of this level on the phot orefractive behavior of CdZnTe crystal is also discussed. (C) 1998 Ame rican Institute of Physics. [S0021-8979(98)05121-4].