ANISOTROPIC INTERFACIAL STRAIN IN INP INGAAS/INP QUANTUM-WELLS/

Numerical simulations based on a valence force field model have been p erformed to explain experimental results on the degree of polarization of photoluminescence from the [001] direction of InP/InGaAs/InP quant um wells grown on (001) substrates by gas-source molecular beam epitax y. The results of the simulations indicate an anisotropic strain field owing to fundamental, growth-related differences between the interfac es of the quantum well. The anisotropic strain field is associated wit h strained Ga-P, Ga-As, and In-As bonds at the InP/InGaAs/InP interfac es. The results of the simulations are in agreement with measurements of the degree of polarization of photoluminescence from the [001] dire ction of the quantum wells. (C) 1998 American Institute of Physics. [S 0021-8979(98)06822-4]