RELATIONSHIP BETWEEN DEEP-LEVEL CENTERS AND STOICHIOMETRY IN SEMIINSULATING GALLIUM-ARSENIDE

Authors
LIN LY CHEN NF ZHONG XR HE HJ LI CJ
Citation
Ly. Lin et al., RELATIONSHIP BETWEEN DEEP-LEVEL CENTERS AND STOICHIOMETRY IN SEMIINSULATING GALLIUM-ARSENIDE, Journal of applied physics, 84(10), 1998, pp. 5826-5827
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
84
Issue
10
Year of publication
1998
Pages
5826 - 5827
Database
ISI
SICI code
0021-8979(1998)84:10<5826:RBDCAS>2.0.ZU;2-0
Abstract
Experimental results have shown the fact that the deep-level centers i n semi-insulating GaAs decrease with the improvement in stoichiometry. The electrical resistivity doubles when the concentration of EL2 cent ers decreases to a half. The microgravity-growth experiments also show that improved crystal stoichiometry results in a decrease of deep-lev el centers. (C) 1998 American Institute of Physics. [S0021-8979(98)049 21-4].