OHMIC CONTACT OF AU SN ON P-HGCDTE

Authors
HU XN ZHAO J GONG HM FANG JX
Citation
Xn. Hu et al., OHMIC CONTACT OF AU SN ON P-HGCDTE, Hongwai yu haomibo xuebao, 17(5), 1998, pp. 397-400
Citations number
9
Categorie Soggetti
Optics
Journal title
Hongwai yu haomibo xuebao → ACNP
ISSN journal
10019014
Volume
17
Issue
5
Year of publication
1998
Pages
397 - 400
Database
ISI
SICI code
1001-9014(1998)17:5<397:OCOASO>2.0.ZU;2-X
Abstract
The contact resistance between Au/Sn and p-HgCdTe was investigated, Th e specific contact resistance rho(c)(295K,77K) of Au/Sn/p-HgCdTe was m easured, being 10(-epsilon) similar to 10(-4)Omega cm(2). By applying the Au/Sn on p-HgCdTe contact to PV devices of Hg1-xCdxTe (x = 0.23), the current-voltage characteristics of the p-n junction were measured, and the results show that the contact resistance is less than 12.6 Om ega.