DEPENDENCE OF OUTPUT PROPERTIES ON RIDGE STRUCTURES AND ASYMMETRIC FACET REFLECTIVITY IN 0.98-MU-M INGAAS-INGAASP-INGAP SQW FP-LDS

The dependence of output performances on the waveguide structures and the facet reflectivity of 8.98-mu m Al-free InGaAs-InGaAsP-InGaP ridge waveguide single-quantum-well Fabry-Perot laser diodes are investigat ed theoretically and experimentally. In our analysis, lateral and long itudinal spatial hole-burning, carrier-density-dependent optical loss in the well, and gain saturation are considered simultaneously. Permis sible ranges of the ridge width, the InGaP cladding thickness, and the front facet reflectivity are presented in conjunction with the desire d performance parameters such as maximum kink-free output power, beam divergence, and peak light density at the front facet.