SIMPLE-MODEL FOR INTERFACE EXCITON WITH A ELECTRON-HOLE SEPARATION

Citation
N. Vanthanh et Na. Viet, SIMPLE-MODEL FOR INTERFACE EXCITON WITH A ELECTRON-HOLE SEPARATION, Modern physics letters B, 12(21), 1998, pp. 887-893
Citations number
10
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Physycs, Mathematical
Journal title
ISSN journal
02179849
Volume
12
Issue
21
Year of publication
1998
Pages
887 - 893
Database
ISI
SICI code
0217-9849(1998)12:21<887:SFIEWA>2.0.ZU;2-R
Abstract
The new simple theoretical model of Cooper(1) for the interface excito n with an itinerant photo-excited hole is studied. The main parameter of the model is the separation d between electron and hole, which are assumed to be confined in the two planes. By variational numerical cal culation, we obtain the values of main parameters of the exciton: bind ing energies, effective Bohr radius, and oscillator strengths versus p arameter d. Checking the applicable of the model, we find good agreeme nt with the previous obtained results. We find also a strong dependenc e on the separation d and an existence of the ''death region'' of the exciton coursed by the hole band gap potential.