CAPACITANCE SPECTROSCOPY OF SINGLE-BARRIER GAAS ALAS/GAAS STRUCTURES CONTAINING INAS QUANTUM DOTS/

Authors
BELYAEV AE EAVES L MAIN PC POLIMENI A STODDART ST HENINI M
Citation
Ae. Belyaev et al., CAPACITANCE SPECTROSCOPY OF SINGLE-BARRIER GAAS ALAS/GAAS STRUCTURES CONTAINING INAS QUANTUM DOTS/, Acta Physica Polonica. A, 94(2), 1998, pp. 245-249
Citations number
1
Categorie Soggetti
Physics
Journal title
Acta Physica Polonica. A → ACNP
ISSN journal
05874246
Volume
94
Issue
2
Year of publication
1998
Pages
245 - 249
Database
ISI
SICI code
0587-4246(1998)94:2<245:CSOSGA>2.0.ZU;2-X
Abstract
An electrostatic profile of single-barrier heterostructures with InAs quantum dots encased into barrier has been studied. The role of growth conditions and structure's design is investigated. The charging state and position of energy levels for InAs quantum dots embedded in AlAs matrix are discussed. PACS numbers: 73.40.Gk, 85.30.Mn.