OPTICAL-PROPERTIES AND MICROSTRUCTURE OF INGAN GROWN BY MOLECULAR-BEAM EPITAXY

The luminescence of InxGa1-xN is studied for thick epitaxial layers an d quantum wells. Using spatially resolved cathodoluminescence spectros copy the commonly observed broad integral photoluminescence spectra we re found to result from spectral and lateral inhomogeneous emission ac ross the samples. Moreover, the integral photoluminescence and absorpt ion spectra show different temperature dependences. The effects can be explained assuming fluctuations of the composition associated with a variation of the band gap. PACS numbers: 68.35.Dv, 68.65.+g, 78.20.-e, 78.55.-m, 78.55.Cr.