COMPARISON OF LONG-TIME DELAY IN LASING IN HOMO-EPITAXIALLY AND HETEROEPITAXIALLY GROWN II-VI LASER-DIODES
Citation
A. Isemann et al., COMPARISON OF LONG-TIME DELAY IN LASING IN HOMO-EPITAXIALLY AND HETEROEPITAXIALLY GROWN II-VI LASER-DIODES, Acta Physica Polonica. A, 94(2), 1998, pp. 355-358
Categorie Soggetti
Physics
SICI code
0587-4246(1998)94:2<355:COLDIL>2.0.ZU;2-H
Abstract
Gain guided laser diodes exhibit unexpected low threshold current dens
ities. Under these conditions, lasing only occurs under a current depe
ndent long-time delay, which is three orders of magnitude larger than
the time needed to reach population inversion. This effect is attribut
ed to a thermally induced index guiding. The change in temperature of
the quantum well region can be estimated using the shift in the wavele
ngth of emission to be up to 70 K. As a further consequence, the thres
hold current density can be reduced by a factor of 4 simply by changin
g the pulse width of the applied current.