INVESTIGATION OF QUANTUM-DOT STRUCTURES GROWN BY MOCVD IN INAS GAAS SYSTEM/

Authors
JASINSKI J BOZEK R STEPNIEWSKI R KOZUBOWSKI J
Citation
J. Jasinski et al., INVESTIGATION OF QUANTUM-DOT STRUCTURES GROWN BY MOCVD IN INAS GAAS SYSTEM/, Acta Physica Polonica. A, 94(3), 1998, pp. 369-373
Citations number
4
Categorie Soggetti
Physics
Journal title
Acta Physica Polonica. A → ACNP
ISSN journal
05874246
Volume
94
Issue
3
Year of publication
1998
Pages
369 - 373
Database
ISI
SICI code
0587-4246(1998)94:3<369:IOQSGB>2.0.ZU;2-M
Abstract
Layers of InAs quantum dots grown on [100] GaAs substrates were charac terised by photoluminescence and investigated by transmission electron microscopy. Two types of InAs islands were observed in these layers. The islands of the first type had mainly a form of big, elongated pyra mids. Most of them were found to be dislocated. On the other hand, the islands of the second type were real self-assembled, coherent quantum dots giving rise to a characteristic photoluminescence band.