BOUND EXCITON LUMINESCENCE IN PHOSPHORUS-DOPED CD1-XMNXTE CRYSTALS

Measurement of photoluminescence as a function of temperature and of m agnetic field in p-type phosphorus doped Cd1-xMnxTe is reported. From the conduction band-acceptor level transition, the ionization energy o f P-acceptors is obtained to be 54 +/- 1 meV. The photoluminescence sp ectrum in the band edge region exhibits three maxims connected with th e recombination of excitons bound to neutral accepters (A(0), X), exci tons bound to neutral donors (D-0, X), and free excitons (X) at energi es E-(A0,E- X) = 1.606, E-(D0,E- X) = 1.610, and E-X = 1.614 eV, respe ctively. At T = 1.4 K a strong increase in PL intensity of (A(0), X) l ine 8-fold as a function of magnetic field is found and shown to origi nate from the magnetic field-induced lowering of the acceptor binding energy and increase in the hole effective volume.