INTERFACE EFFECTS IN THE MODEL OF DELTA-POTENTIAL FOR 2D SEMICONDUCTOR QUANTUM STRUCTURES

Here we show that the enhancement of exchange field at the nonmagnetic -semimagnetic semiconductor interface can be described by delta-locali zed exchange field. In this model, the wave functions of electron conf ined in quantum well with semimagnetic barriers can be found analytica lly for an arbitrary orientation of magnetic field B with respect to g rowth axis C. Two cases corresponding to B parallel to C and B perpend icular to Care considered. The comparison of present approach with exp erimental data shows that the proposed method is an efficient tool for interface investigation in 2D quantum structures.