Schottky diodes resulting from an intimate contact of aluminum on elec
trodeposited poly(3-methylthiopene) were studied by admittance spectro
scopy, capacitance-voltage measurements and voltaic and optically-indu
ced current and capacitance transients. The loss tangents show the exi
stence of interface states that can be removed by vacuum annealing. Fu
rthermore, the C-V curves contradict the idea of movement of the dopan
t ions.