OPTICALLY-ACTIVE SI-ER LAYERS GROWN BY THE SUBLIMATION MBE METHOD

Authors
STEPIKHOVA M ANDREEV A ANDREEV B KRASILNIK Z SHMAGIN V KUZNETSOV V RUBTSOVA R JANTSCH W ELLMER H PALMETSHOFER L PREIER H KARPOV Y PIPLITS K HUTTER H
Citation
M. Stepikhova et al., OPTICALLY-ACTIVE SI-ER LAYERS GROWN BY THE SUBLIMATION MBE METHOD, Acta Physica Polonica. A, 94(3), 1998, pp. 549-554
Citations number
9
Categorie Soggetti
Physics
Journal title
Acta Physica Polonica. A → ACNP
ISSN journal
05874246
Volume
94
Issue
3
Year of publication
1998
Pages
549 - 554
Database
ISI
SICI code
0587-4246(1998)94:3<549:OSLGBT>2.0.ZU;2-0
Abstract
We report the first application of sublimation molecular beam epitaxy to grow uniformly and selectively doped Si:Er layers with Er concentra tion up to 5 x 10(18) cm(-3). The Hall concentration of electrons is a bout 10% of total Er contents. The mobility is 300-400 cm(2) V-1 s(-1) at 300 K. All samples exhibit photoluminescence at 1.537 mu m up to 1 00-140 K.