DLTS STUDY OF BE-DOPED P-TYPE ALGAAS GAAS MBE LAYERS/

Deep-level transient spectroscopy method was applied to study deep hol e traps in p-type Al0.5Ga0.5As grown on GaAs semi-insulating substrate by MBE. Five hole traps labelled by us as H0 to H4 were found. For th e traps H1, H3 and H4 thermal activation energies obtained from Arrhen ius plots were equal to: E-H1 = 0.15 eV, E-H3 = 0 4 eV, and E-H4 = 0.4 6 eV. Hole emission from the trap H2 was electric field dependent with the thermal activation energy extrapolated to zero-field equal to 0.3 7 eV. Capture cross-sections for the traps H1 and H4 were thermally ac tivated with energetic barriers 0.04 eV (for H1) and 0.18 eV (for H4).