RESONANT-TUNNELING IN DOUBLE-BARRIER HETEROSTRUCTURES WITH AN ACCUMULATION LAYER

Citation
T. Wosinski et al., RESONANT-TUNNELING IN DOUBLE-BARRIER HETEROSTRUCTURES WITH AN ACCUMULATION LAYER, Acta Physica Polonica. A, 94(3), 1998, pp. 617-621
Citations number
6
Categorie Soggetti
Physics
Journal title
ISSN journal
05874246
Volume
94
Issue
3
Year of publication
1998
Pages
617 - 621
Database
ISI
SICI code
0587-4246(1998)94:3<617:RIDHWA>2.0.ZU;2-4
Abstract
Two modes of electron gas injection in resonant tunnelling through GaA s/AlGaAs double-barrier heterostructures were revealed while studying their current-voltage characteristics. Examining peculiarities of the characteristics within the temperature range 4-350 K and under a high magnetic field, we were able to distinguish the contribution to resona nt tunnelling of ballistic electrons injected from a three-dimensional electron gas in the emitter contact and that of electrons injected fr om a two-dimensional electron gas in the accumulation layer formed nea r the emitter barrier.