T. Wosinski et al., RESONANT-TUNNELING IN DOUBLE-BARRIER HETEROSTRUCTURES WITH AN ACCUMULATION LAYER, Acta Physica Polonica. A, 94(3), 1998, pp. 617-621
Two modes of electron gas injection in resonant tunnelling through GaA
s/AlGaAs double-barrier heterostructures were revealed while studying
their current-voltage characteristics. Examining peculiarities of the
characteristics within the temperature range 4-350 K and under a high
magnetic field, we were able to distinguish the contribution to resona
nt tunnelling of ballistic electrons injected from a three-dimensional
electron gas in the emitter contact and that of electrons injected fr
om a two-dimensional electron gas in the accumulation layer formed nea
r the emitter barrier.