ULTRA-LOW POWER 2-MOS VIRTUAL-SHORT CIRCUIT AND ITS APPLICATION

In this paper, a virtual-short circuit which consists of only two MOS transistors operated in the weak-inversion region is proposed. It has the advantages of almost zero power consumption, low voltage operation , small chip area, and no needlessness of bias voltages or currents. T he second order effects, such as the device mismatch, the Early effect , and the temperature dependency of the circuit are analyzed in detail . Next, current-controlled and voltage-controlled current sources usin g the proposed virtual-short circuit are presented as applications. Th e performance of the proposed circuits is estimated using SPICE simula tion with MOSIS 1.2 mu m CMOS device parameters. The results are repor ted on this paper.