FABRICATION PROCESSES FOR HIGH-T-C SUPERCONDUCTING INTEGRATED-CIRCUITS BASED ON EDGE-TYPE JOSEPHSON-JUNCTIONS

Citation
T. Satoh et al., FABRICATION PROCESSES FOR HIGH-T-C SUPERCONDUCTING INTEGRATED-CIRCUITS BASED ON EDGE-TYPE JOSEPHSON-JUNCTIONS, IEICE transactions on electronics, E81C(10), 1998, pp. 1532-1537
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
09168524
Volume
E81C
Issue
10
Year of publication
1998
Pages
1532 - 1537
Database
ISI
SICI code
0916-8524(1998)E81C:10<1532:FPFHSI>2.0.ZU;2-1
Abstract
We have studied an in situ edge preparation process and the effect of a substrate rotation during the edge preparation in order to improve t he uniformity and electrical characteristics of high-T-c edge-type Jos ephson junctions. The improved YBa2Cu3Ox/PrBa2Cu3Ox/YBa2Cu3Ox edge jun ctions showed small la-critical current spreads as low as 10% for 12 j unctions. We have confirmed that the spreads do not increase significa ntly by adding groundplane over the junctions. In this paper, we will describe these processes developed for the fabrication of high-T-c sup erconducting integrated circuits.