SOI WAVE-GUIDE GESI AVALANCHE PIN PHOTODETECTOR AT 1.3 MU-M WAVELENGTH

A GeSi avalanche photodetector grown on a silicon-on-insulator (SOI) p assive waveguide is demonstrated. The absorption layer of the detector consisits of alternating layers of 66 Angstrom Ge0.44Si0.56 and 480 A ngstrom Si on SOI substrate. The thick SOI waveguide couples the light from an optical fiber into the GeSi/Si strain-limited thin absorption region. The detector exhibits low dark current, sharp breakdown and a n external responsivity of 0.2 A/W at 1.3 mu m wavelength.