Cathodic are discharges are commonly used as metal ion sources to carr
y out, in vacuo, the precleaning procedure in cathodic are evaporation
and combined cathodic arc/unbalanced magnetron deposition processes.
During this very efficient etching step, droplets are generated, which
give rise to growth defects in the subsequently deposited hard coatin
g. The number and size of droplets depend on the melting point of the
metals used during ion etching. The present paper investigates the gen
eration of droplets by target materials Al, Cu, TiAl, Ti, Zr, Cr, Nb a
nd Mo with melting points in the range 660-2650 degrees C. Under the p
rocess parameters used, the TiAl alloy target showed the highest numbe
r of droplets generated (100 x 10(3) mm(-2)) whereas the largest, up t
o 20 mu m diameter and quite often 'splash like', formed during evapor
ation from Al targets. Both metals with melting points greater than 20
00 degrees C show very similar droplet generation, with mean droplet d
eposition densities of 5-10 x 10(3) mm(-2) and diameters up to 5 mu m.
A comparison between the as-etch ed and as-coated-samples indicates t
hat the number of droplets deposited during the etching phase with TiA
l and Mo formed an identical number of growth defects. In the case of
Cr the number of defects on top of the coated surface were less. In ge
neral, following a non droplet producing unbalanced magnetron depositi
on process, defects were observed to extend from the substrate/coating
interface to the coating surface. (C) 1997 Elsevier Science Ltd.