FORMATION AND PHOTOSENSITIVITY OF DEFECTS IN SE IMPLANTED SILICA

Silica was implanted with Se ions at 4 MeV with nominal doses of 0.1, 0.3, 0.5, 1.0 and 3.0 x 10(16) ions/cm(2). The optical absorption was measured from 1.8 to 6.2 eV. Bands at 5.9 and 5 eV are observed in the absorption spectra, The magnitude of the absorption increases with in creasing dose but the increase is variant with dose. Bands at 2.6, 3.7 and 4.8 eV are attributed to the presence of the Se. The 0.3 and 1.0 x 10(16) samples were exposed to 5 eV KrF excimer irradiation with a f luence of 150 mJ/cm(2) per pulse for pulse totals of 1.5 J/cm(2). Blea ching of the 5 and 5.9 eV bands is observed and is attributed to the b leaching of defects at 5, 5.5 and 5.9 eV. (C) 1998 Published by Elsevi er Science B.V. All rights reserved.